Общие
| Rds On (Max) @ Id, Vgs | 29mOhm @ 6A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 414 pF @ 10 V |
| Производитель | Diodes Incorporated |
| Тип монтажа | Surface Mount |
| Упаковка | Tape & Reel (TR) Cut Tape (CT) |
| Статус позиции | В производстве |
| Технология | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |