Общие
| Rds On (Max) @ Id, Vgs | 11.9mOhm @ 2.5A, 4.5V |
|---|---|
| Базовый Part Number | DMN2009 |
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 17.5nC @ 4V |
| Input Capacitance (Ciss) (Max) @ Vds | 1780pF @ 10V |
| Производитель | Diodes Incorporated |
| Тип монтажа | Surface Mount |
| Product Status | Active |
| Технология | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.4V @ 640µA |