Общие
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 3A, 4.5V |
|---|---|
| Конфигурация | 2 N-Channel (Dual) Common Drain |
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 45.4nC @ 6V |
| Input Capacitance (Ciss) (Max) @ Vds | 2333pF @ 6V |
| Производитель | Diodes Incorporated |
| Тип монтажа | Surface Mount |
| Product Status | Active |
| Технология | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |