일반
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 8V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 480 V |
| 제조사 | Transphorm |
| 실장 방식 | Through Hole |
| Product Status | Not For New Designs |
| 기술 | GaNFET (Gallium Nitride) |
| Vgs (Max) | ±18V |
| Vgs(th) (Max) @ Id | 2.6V @ 500µA |