일반
| Rds On (Max) @ Id, Vgs | 41mOhm @ 30A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 400 V |
| 제조사 | Transphorm |
| 실장 방식 | Through Hole |
| Product Status | Active |
| 기술 | GaNFET (Gallium Nitride) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.8V @ 1mA |