일반
| Rds On (Max) @ Id, Vgs | 90mOhm @ 18A, 20V |
|---|---|
| FET Feature | Standard |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 800 V |
| 제조사 | Toshiba Semiconductor and Storage |
| 실장 방식 | Through Hole |
| Product Status | Active |
| 기술 | SiCFET (Silicon Carbide) |
| Vgs (Max) | ±25V, -10V |
| Vgs(th) (Max) @ Id | 5.8V @ 20mA |