일반
| Rds On (Max) @ Id, Vgs | 40mOhm @ 28.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6250 pF @ 300 V |
| 제조사 | Toshiba Semiconductor and Storage |
| 실장 방식 | Through Hole |
| Product Status | Active |
| 시리즈 | DTMOSVI |
| 기술 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 2.85mA |