일반
| Rds On (Max) @ Id, Vgs | 46mOhm @ 4A, 10V |
|---|---|
| 기본 품번 | SSM6N55 |
| 구성 | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 15V |
| 제조사 | Toshiba Semiconductor and Storage |
| 실장 방식 | Surface Mount |
| Product Status | Active |
| 기술 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |