일반
| Rds On (Max) @ Id, Vgs | 350mOhm @ 1A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 10 V |
| 제조사 | Rohm Semiconductor |
| 실장 방식 | Surface Mount |
| Product Status | Not For New Designs |
| 기술 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
