일반
| Rds On (Max) @ Id, Vgs | 70mOhm @ 32.5A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 20 V |
| 제조사 | Microsemi Corporation |
| 실장 방식 | Through Hole |
| Product Status | Obsolete |
| 기술 | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |