일반
| Rds On (Max) @ Id, Vgs | 105mOhm @ 30A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3462 pF @ 2400 V |
| 제조사 | Microchip Technology |
| 실장 방식 | Through Hole |
| Product Status | Active |
| 기술 | SiCFET (Silicon Carbide) |
| Vgs (Max) | +23V, -10V |
| Vgs(th) (Max) @ Id | 2.97V @ 3mA |
