일반
| Gate Charge | 200 nC |
|---|---|
| IGBT Type | PT |
| 입력 유형 | Standard |
| 제조사 | Microchip Technology |
| 실장 방식 | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 25 ns |
| 시리즈 | POWER MOS 8™ |
| Switching Energy | 1652µJ (on), 1389µJ (off) |
| Td (on/off) @ 25°C | 18ns/149ns |
| Test Condition | 600V, 47A, 4.7Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 47A |