일반
| Gate Charge | 102 nC |
|---|---|
| IGBT Type | PT |
| 입력 유형 | Standard |
| 제조사 | Microchip Technology |
| 실장 방식 | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 19 ns |
| 시리즈 | POWER MOS 8® |
| Switching Energy | 307µJ (on), 254µJ (off) |
| Td (on/off) @ 25°C | 16ns/122ns |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |