일반
| Rds On (Max) @ Id, Vgs | 12.4mOhm @ 12A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 755 pF @ 15 V |
| 제조사 | International Rectifier |
| 실장 방식 | Surface Mount |
| Product Status | Active |
| 시리즈 | HEXFET® |
| 기술 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |