일반
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 15 V |
| 제조사 | Infineon Technologies |
| 실장 방식 | Surface Mount |
| Product Status | Obsolete |
| 시리즈 | HEXFET® |
| 기술 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |