일반
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 100A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 137 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8320 pF @ 25 V |
| 제조사 | Infineon Technologies |
| 실장 방식 | Through Hole |
| Product Status | Obsolete |
| 시리즈 | HEXFET®, StrongIRFET™ |
| 기술 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.4V @ 150µA |