일반
| Rds On (Max) @ Id, Vgs | 105mOhm @ 3.4A, 10V |
|---|---|
| FET Feature | Schottky Diode (Isolated) |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 25 V |
| 제조사 | Infineon Technologies |
| 실장 방식 | Surface Mount |
| Product Status | Obsolete |
| 기술 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |