일반
| Rds On (Max) @ Id, Vgs | 111mOhm @ 11.2A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 624 pF @ 400 V |
| 제조사 | Infineon Technologies |
| 실장 방식 | Surface Mount |
| Product Status | Active |
| 시리즈 | CoolSIC™ M1 |
| 기술 | SiCFET (Silicon Carbide) |
| Vgs (Max) | +23V, -5V |
| Vgs(th) (Max) @ Id | 5.7V @ 3.3mA |