一般
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 30A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12010 pF @ 25 V |
| メーカー | Vishay Siliconix |
| 実装タイプ | Through Hole |
| Product Status | Obsolete |
| シリーズ | Automotive, AEC-Q101, TrenchFET® |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |