一般
| Rds On (Max) @ Id, Vgs | 41mOhm @ 32A, 8V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2197 pF @ 400 V |
| メーカー | Transphorm |
| 実装タイプ | Through Hole |
| Product Status | Obsolete |
| 技術 | GaNFET (Gallium Nitride) |
| Vgs (Max) | ±18V |
| Vgs(th) (Max) @ Id | 2.65V @ 700µA |