一般
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 35A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 15 V |
| メーカー | Toshiba Semiconductor and Storage |
| 実装タイプ | Surface Mount |
| Product Status | Active |
| シリーズ | U-MOSIX-H |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.1V @ 200µA |