一般
| Rds On (Max) @ Id, Vgs | 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V |
|---|---|
| 構成 | N and P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.8nC @ 10V, 18nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 505pF @ 10V, 810pF @ 10V |
| メーカー | Toshiba Semiconductor and Storage |
| 実装タイプ | Surface Mount |
| 梱包 | Tape & Reel (TR) Cut Tape (CT) |
| 製品ステータス | 量産中 |
| 技術 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |