一般
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.9A, 10V |
|---|---|
| FET Feature | Super Junction |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 300 V |
| メーカー | Toshiba Semiconductor and Storage |
| 実装タイプ | Through Hole |
| Product Status | Active |
| シリーズ | DTMOSIV |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 3.7V @ 790µA |