一般
| Rds On (Max) @ Id, Vgs | 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V |
|---|---|
| 構成 | N and P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 4.5V, 6.7nC @4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 15V, 480pF @ 10V |
| メーカー | Toshiba Semiconductor and Storage |
| 実装タイプ | Surface Mount |
| Product Status | Active |
| 技術 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 1mA, 1.2V @ 1mA |