一般
| Rds On (Max) @ Id, Vgs | 630mOhm @ 200mA, 5V |
|---|---|
| ベース品番 | SSM6L36 |
| 構成 | N and P-Channel |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 1.23nC @ 4V |
| Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 10V |
| メーカー | Toshiba Semiconductor and Storage |
| 実装タイプ | Surface Mount |
| Product Status | Active |
| 技術 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |