一般
| Rds On (Max) @ Id, Vgs | 56mOhm @ 2A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 10 V |
| メーカー | Toshiba Semiconductor and Storage |
| 実装タイプ | Surface Mount |
| Product Status | Active |
| シリーズ | Automotive, AEC-Q101 |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | +12V, -8V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
