一般
| Rds On (Max) @ Id, Vgs | 127mOhm @ 1A, 4V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 335 pF @ 10 V |
| メーカー | Toshiba Semiconductor and Storage |
| 実装タイプ | Surface Mount |
| Product Status | Obsolete |
| シリーズ | U-MOSIII |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
