一般
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 19A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4870 pF @ 40 V |
| メーカー | Texas Instruments |
| 実装タイプ | Surface Mount |
| Product Status | Active |
| シリーズ | NexFET™ |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.3V @ 250µA |
