一般
| Rds On (Max) @ Id, Vgs | 12.2mOhm @ 11A, 8V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 506 pF @ 15 V |
| メーカー | Texas Instruments |
| 実装タイプ | Surface Mount |
| Product Status | Active |
| シリーズ | NexFET™ |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |