一般
| Rds On (Max) @ Id, Vgs | 1190mOhm @ 100mA, 8V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.281 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10.5 pF @ 10 V |
| メーカー | Texas Instruments |
| 実装タイプ | Surface Mount |
| Product Status | Active |
| シリーズ | FemtoFET™ |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | 10V |
| Vgs(th) (Max) @ Id | 1.35V @ 2.5µA |
