一般
| Rds On (Max) @ Id, Vgs | 17.1mOhm @ 1A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 862 pF @ 6 V |
| メーカー | Texas Instruments |
| 実装タイプ | Surface Mount |
| Product Status | Active |
| シリーズ | NexFET™ |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |