一般
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.5A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 10 V |
| メーカー | Taiwan Semiconductor Corporation |
| 実装タイプ | Surface Mount |
| Product Status | Not For New Designs |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |