一般
| Rds On (Max) @ Id, Vgs | 118mOhm @ 500mA, 6V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 400 V |
| メーカー | Tagore Technology |
| 実装タイプ | Surface Mount |
| Product Status | Active |
| 技術 | GaNFET (Gallium Nitride) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 11mA |