一般
| Rds On (Max) @ Id, Vgs | 67mOhm @ 20A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 400 V |
| メーカー | STMicroelectronics |
| 実装タイプ | Through Hole |
| Product Status | Active |
| シリーズ | Automotive, AEC-Q101 |
| 技術 | SiCFET (Silicon Carbide) |
| Vgs (Max) | +22V, -10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |