一般
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1377 pF @ 1000 V |
| メーカー | SemiQ |
| 実装タイプ | Through Hole |
| Product Status | Active |
| 技術 | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -10V |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
