一般
| Rds On (Max) @ Id, Vgs | 28mOhm @ 60A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 203 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2890 pF @ 800 V |
| メーカー | onsemi |
| 実装タイプ | Through Hole |
| Product Status | Active |
| シリーズ | Automotive, AEC-Q101 |
| 技術 | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -15V |
| Vgs(th) (Max) @ Id | 4.3V @ 20mA |