一般
| Rds On (Max) @ Id, Vgs | 102mOhm @ 2.7A, 4.5V |
|---|---|
| FET Feature | Schottky Diode (Isolated) |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 10 V |
| メーカー | NXP USA Inc. |
| 実装タイプ | Surface Mount |
| Product Status | Obsolete |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |