一般
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 25A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13490 pF @ 25 V |
| メーカー | NXP USA Inc. |
| 実装タイプ | Through Hole |
| Product Status | Active |
| シリーズ | Automotive, AEC-Q101, TrenchMOS™ |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |