一般
| Rds On (Max) @ Id, Vgs | 45mOhm @ 30A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 178 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 1000 V |
| メーカー | Microchip Technology |
| 実装タイプ | Through Hole |
| Product Status | Active |
| 技術 | SiCFET (Silicon Carbide) |
| Vgs (Max) | +23V, -10V |
| Vgs(th) (Max) @ Id | 3.25V @ 2.5mA (Typ) |