一般
| Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2790 pF @ 1000 V |
| メーカー | IXYS |
| 実装タイプ | Surface Mount |
| Product Status | Obsolete |
| 技術 | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -5V |
| Vgs(th) (Max) @ Id | 4V @ 15mA |
