一般
| Gate Charge | 188 nC |
|---|---|
| 入力タイプ | Standard |
| メーカー | IXYS |
| 実装タイプ | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 330 ns |
| シリーズ | BIMOSFET™ |
| Switching Energy | 3.43mJ (on), 430µJ (off) |
| Td (on/off) @ 25°C | 19ns/200ns |
| Test Condition | 850V, 21A, 1Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 21A |
