一般
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 33A, 10V |
|---|---|
| FET Feature | Schottky Diode (Body) |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4160 pF @ 13 V |
| メーカー | International Rectifier |
| 実装タイプ | Surface Mount |
| Product Status | Active |
| シリーズ | HEXFET® |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2.1V @ 100µA |