一般
| Rds On (Max) @ Id, Vgs | 26mOhm @ 29A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 25 V |
| メーカー | Infineon Technologies |
| 実装タイプ | Through Hole |
| Product Status | Last Time Buy |
| シリーズ | HEXFET® |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |