一般
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 100A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 830 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 29550 pF @ 25 V |
| メーカー | Infineon Technologies |
| 実装タイプ | Through Hole |
| Product Status | Obsolete |
| シリーズ | HEXFET®, StrongIRFET™ |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |