一般
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 13 V |
| メーカー | Infineon Technologies |
| 実装タイプ | Surface Mount |
| Product Status | Obsolete |
| シリーズ | HEXFET® |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.1V @ 50µA |