一般
| Rds On (Max) @ Id, Vgs | 600mOhm @ 1.8A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 400 V |
| Input Capacitance (Ciss) (Max) @ Vds | 364 pF @ 400 V |
| メーカー | Infineon Technologies |
| 実装タイプ | Through Hole |
| Product Status | Not For New Designs |
| シリーズ | CoolMOS™ P7 |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |