一般
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 80A, 10V |
|---|---|
| ベース品番 | IPP80P03 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11300 pF @ 25 V |
| メーカー | Infineon Technologies |
| 実装タイプ | Through Hole |
| Product Status | Active |
| シリーズ | Automotive, AEC-Q101, OptiMOS®-P2 |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | +5V, -16V |
| Vgs(th) (Max) @ Id | 2V @ 253µA |