一般
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 70A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4810 pF @ 25 V |
| メーカー | Infineon Technologies |
| 実装タイプ | Through Hole |
| Product Status | Obsolete |
| シリーズ | Automotive, AEC-Q101, OptiMOS™ |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 120µA |