一般
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
|---|---|
| ベース品番 | BSG0813 |
| 構成 | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 12V |
| メーカー | Infineon Technologies |
| 実装タイプ | Surface Mount |
| Product Status | Active |
| 技術 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |