一般
| Rds On (Max) @ Id, Vgs | 300mOhm @ 8A, 5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 675 pF @ 25 V |
| メーカー | Harris Corporation |
| 実装タイプ | Through Hole |
| Product Status | Active |
| 技術 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |